 ISSN 0235-7216 ISSN 2424-4538 (online) |
2009 m. Nr. 2 Characterization of boron-doped diamond electrode by Raman spectroscopy with near infrared (785 nm) excitation
The boron-doped diamond (BDD) electrode has been characterized by ordinary Raman and surface-enhanced Raman spectroscopy using a 785-nm excitation. A relative enhancement of sp3-carbon bands associated with amorphous (disordered) diamond at 1180 and 1272 cm–1 was observed in the 785-nm spectrum versus the crystalline diamond band at 1327 cm–1. In addition, frequency downshift of amorphous and crystalline diamond bands was established. In contrast to 532 and 632.8 nm excited spectra, no sp2-like bands of amorphous carbon (D and G bands) were detected with near-infrared (NIR) excitation. The observed changes were interpreted assuming an increase in the probing depth of the Raman experiment with a longer wavelength and resonance enhancement of larger amorphous diamond clusters. It has been demonstrated that BDD electrode surface carbon structures can be effectively probed by the NIR SERS approach using Au nanoparticles prepared by the hot citrate reduction method. Keywords: boron-doped diamond, Raman, NIR excitation, 785 nm, SERS |
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